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CHA2193
RoHS COMPLIANT
20-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC Description
The CHA2193 is a three stages low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
20 18 16
Gain (dB)
Main Features
| 2.0 dB noise figure | 18 dB 1dB gain | 8 dBm output power (-1dB gain comp.) | Very good broadband input matching | DC power consumption, 60mA @ 3.5V | Chip size : 2.07 x 1.03 x 0.10 mm
14 12 10 8 6 4 2 0 20 21 22 23 24 25 26 27 28 29 30 31 32 33
NF (dB)
Frequency ( GHz )
Typical on Wafer Measurements
Main Characteristics
Tamb. = 25C Symbol
Fop G NF P1dB Id
Parameter
Operating frequency range Small signal gain Noise figure Output power at 1dB gain compression Bias current
Min
20 16
Typ
Max
30
Unit
GHz dB
18 2.0 2.5
dB dBm
6
8 60 100
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA21939042
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2193
Tamb = +25C, Vd = 3.5V Symbol
Fop G G Is NF P1dB VSWRin VSWRout Vd Id
20-30GHz Low Noise Amplifier
Electrical Characteristics for Narrowband Operation
Parameter
Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Reverse isolation (1) Noise figure CW output power at 1dB compression (1) Input VSWR (1) Output VSWR (1) DC Voltage Bias current 6 25
Min
24 16
Typ
Max
26
Unit
GHz dB dB dB
18 0.5 30 2.0 8 1.8:1 1.8:1 3.5 60 2.0:1 2.0:1 4 100 2.5
dB dBm
V mA
(1) These values are representative for CW on-wafer measurements that are made without bonding wires at the RF ports.
Absolute Maximum Ratings
Tamb. = 25C (1) Symbol
Vd Id Vg Pin Ta Tstg Drain bias voltage Drain bias current Gate bias voltage Maximum peak input power overdrive (2) Operating temperature range Storage temperature range
Parameter
Values
4.0 120 -2.0 to +0.4 +15 -40 to +85 -55 to +155
Unit
V mA V dBm C C
(1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s.
Ref. : DSCHA21939042
2/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-30GHz Low Noise Amplifier
CHA2193
This low noise amplifier can also be used for broadband operation following the relaxed characteristics shown below.
Electrical Characteristics for Broadband Operation
Tamb = +25C, Vd = 3.5V Symbol
Fop G G Is NF P1dB VSWRin VSWRout Vd Id
Parameter
Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Reverse isolation (1) Noise figure CW output power at 1dB compression (1) Input VSWR (1) Output VSWR (1) DC Voltage Bias current
Min
20 16
Typ
Max
30
Unit
GHz dB dB dB
18 1
25
30 2.0 2.5
dB dBm
6
8 2.0:1 2.0:1 3.5 60 3.0:1 3.0:1 4 100
V mA
(1) These values are representative for CW on-wafer measurements that are made without bonding wires at the RF ports.
Ref. : DSCHA21939042
3/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2193
Bias Conditions : Vd = +3.5V, Id = 60 mA Freq. GHz
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
20-30GHz Low Noise Amplifier
Typical On Wafer Scattering Parameters and Noise Figure
S11 dB
-0,09 -0,12 -0,14 -0,18 -0,22 -0,26 -0,34 -0,50 -0,92 -1,82 -2,71 -2,83 -3,00 -3,85 -5,36 -7,12 -8,37 -8,54 -8,48 -8,44 -8,67 -9,07 -10,37 -12,87 -14,41 -16,02 -15,80 -13,84 -11,86 -10,90 -9,43 -8,16 -7,04 -6,00 -4,99 -4,01 -3,08 -2,41 -2,00 -1,45
S11 /
-14,32 -28,71 -43,08 -57,94 -72,91 -88,98 -105,52 -123,88 -143,90 -164,35 178,27 157,47 128,18 90,80 48,78 6,24 -33,74 -68,42 -96,54 -120,79 -140,98 -161,02 -177,31 172,65 172,94 -179,78 -170,46 -161,36 -164,84 -170,62 -175,48 176,47 168,81 159,28 150,58 139,72 128,47 115,71 104,97 92,23
S12 dB
-80,74 -81,92 -77,35 -83,41 -67,79 -76,58 -79,08 -75,04 -69,60 -66,24 -65,98 -62,37 -58,73 -55,58 -53,10 -50,87 -50,28 -49,79 -49,80 -50,15 -51,37 -50,08 -49,49 -49,57 -50,14 -49,34 -50,03 -50,36 -51,41 -52,60 -51,86 -54,05 -52,64 -55,11 -53,15 -52,03 -51,22 -52,00 -56,87 -49,81
S12 /
113,11 -0,74 25,09 -166,09 -40,02 -160,06 -134,17 -97,32 -106,78 173,75 101,28 32,22 -15,96 -61,72 -89,73 -128,11 -153,61 -174,52 165,50 150,57 138,76 131,82 119,58 101,38 91,56 75,10 60,07 40,82 23,31 10,51 -9,98 -26,91 -39,12 -64,75 -62,66 -79,29 -91,36 -110,30 -132,32 -37,13
S21 dB
-40,30 -40,82 -42,54 -51,25 -28,44 -33,45 -21,80 -10,72 -1,62 5,69 10,50 13,30 15,32 16,80 17,51 17,54 17,30 17,28 17,39 17,41 17,89 18,09 18,30 18,57 19,00 19,05 19,19 19,29 19,21 19,11 19,24 19,20 18,93 18,67 18,15 17,22 15,94 14,33 12,28 10,30
S21 /
169,78 119,08 77,54 127,54 41,42 -69,76 -126,19 177,68 126,62 71,35 13,83 -36,97 -81,84 -124,31 -164,61 159,88 130,36 104,28 80,17 58,32 34,39 10,95 -12,07 -33,78 -57,79 -80,79 -103,36 -126,71 -149,27 -171,38 165,57 141,50 116,42 91,00 63,85 35,89 8,86 -17,74 -42,47 -66,02
S22 dB
-15,37 -9,93 -6,93 -5,91 -5,58 -5,08 -4,76 -4,83 -5,16 -5,45 -5,68 -5,92 -6,28 -6,59 -7,18 -7,81 -8,91 -9,46 -10,19 -10,77 -11,68 -12,83 -14,17 -15,50 -17,55 -19,49 -21,66 -24,61 -23,32 -23,04 -20,98 -21,22 -20,33 -18,22 -15,72 -12,74 -9,98 -8,05 -6,44 -5,17
S22 /
-135,30 -131,21 -141,01 -155,93 -154,39 -162,37 -170,76 -176,52 179,09 176,68 174,06 171,52 168,03 164,79 161,05 158,07 155,99 153,50 151,85 148,38 142,69 136,93 132,50 126,88 116,56 105,05 82,30 56,13 16,43 5,95 -11,15 -10,65 -13,52 5,77 6,40 9,57 8,08 4,67 -0,77 -7,26
NF
2,75 2,39 2,52 1,96 1,89 1,83 1,74 1,72 1,72 1,66 1,82 1,90 1,86 2,13
Ref. : DSCHA21939042
4/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-30GHz Low Noise Amplifier
Typical on Wafer Measurements
Bias conditions: Tamb = +25C, Vd = 3.5V, Vg1 = Vg2, Id = 60mA
CHA2193
Gain, Rloss (dB)
25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 20 21 22 23 24 25 26 27 28 29 30 31 32 33
Gain
S11
S22
Frequency (GHz)
Noise Figure (dB)
5
4
3
2
1
0 20 21 22 23 24 25 26 27 28 29 30 31 32 33
Frequency (GHz)
Ref. : DSCHA21939042
5/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2193
Typical on Jig Measurements
20-30GHz Low Noise Amplifier
Bias conditions: Tamb = +25C, Vd = 3.5V, Vg1 = Vg2, Id = 60mA
Gain, Rloss (dB)
20 15 10 5 0 -5
Gain
S11
-10 -15 -20 -25 -30 20 21 22 23 24 25 26 27 28 29 30 31 32 33
S22
Frequency (GHz)
Gain (dB)
24 22 20 18 16 14 12 10 8 6 4 2 0 20 20.5 21 21.5 22 22.5 23 23.5 24 24.5 25 25.5 26
6 5.5 5
Gain
4.5 4 3.5 3 2.5 2
NF
1.5 1 0.5 0 26.5
Frequency (GHz)
Ref. : DSCHA21939042
6/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Noise Figure (dB)
20-30GHz Low Noise Amplifier
CHA2193
Gain & Output power
20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8
Gain (dB)
Pout (dBm)
-10 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6
Input power (dBm)
Typical Bias Tuning for Low Noise Operation
For low noise operation, a separate access to the gate voltages of the first stage ( Vgs1 ), and of the second and third stages ( Vgs2 ) is provided. Nominal bias for low noise operation is obtained for a typical current of 20 mA for the second and third stages and 10 mA for the first stage ( 50 mA for the amplifier ). The first step to bias the amplifier is to tune the Vgs1 = -1V, and Vgs2 to drive 40 mA for the full amplifier. Then Vgs1 is reduced to obtain 50 mA of current through the amplifier. A fine tuning of the noise figure may be obtained by modifying the Vgs1 bias voltage, but keeping the previous value for Vgs2.
Ref. : DSCHA21939042
7/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2193
20-30GHz Low Noise Amplifier
Chip Assembly and Mechanical Data
1 to 10nF
Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is to be prefered.
Ref. : DSCHA21939042
8/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-30GHz Low Noise Amplifier
CHA2193
Bonding pad positions.
( Chip thickness : 100m. All dimensions are in micrometers )
Ref. : DSCHA21939042
9/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2193
20-30GHz Low Noise Amplifier
Ordering Information
Chip form : CHA2193-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA21939042
10/1
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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